XAFS applications in semiconductors(优质3篇)
XAFS applications in semiconductors 篇一
X-ray Absorption Fine Structure (XAFS) spectroscopy has emerged as a powerful technique for studying the local atomic structure and electronic properties of materials. In recent years, XAFS has found numerous applications in the field of semiconductors, offering valuable insights into their structural and electronic properties. This article will explore some of the key applications of XAFS in semiconductors.
One of the primary applications of XAFS in semiconductors is the determination of local coordination and chemical state of dopant atoms. Dopants are impurities intentionally added to semiconductors to modify their electrical and optical properties. XAFS can provide information about the local structural environment of dopant atoms, such as their coordination number, bond length, and bond angle. This information is crucial for understanding the impact of dopants on the performance of semiconductors in electronic devices.
Another important application of XAFS in semiconductors is the investigation of defects and impurities. Defects and impurities can significantly affect the electronic properties of semiconductors, leading to changes in conductivity, carrier lifetime, and optical properties. XAFS can be used to identify and characterize the nature of defects and impurities in semiconductors, providing valuable information for device fabrication and optimization.
XAFS is also widely used for studying the electronic structure of semiconductors. By measuring the X-ray absorption and emission spectra, researchers can obtain information about the electronic states near the Fermi level, the density of states, and the bonding nature of atoms in the material. This information is critical for understanding the fundamental electronic properties of semiconductors and designing new materials with desired electronic characteristics.
Additionally, XAFS can be used to investigate the interface properties between different materials in semiconductor devices. Interfaces play a crucial role in determining the performance of devices such as transistors and solar cells. XAFS can reveal the atomic structure and chemical composition of interfaces, providing insights into the interfacial electronic properties and the mechanisms governing charge transfer and recombination processes.
In conclusion, X-ray Absorption Fine Structure spectroscopy has proven to be a valuable tool for studying semiconductors. Its applications range from the determination of local coordination and dopant states to the investigation of defects, impurities, and interface properties. XAFS provides a unique insight into the structural and electronic properties of semiconductors, enabling researchers to optimize device performance and design new materials with enhanced functionality.
XAFS applications in semiconductors 篇二
X-ray Absorption Fine Structure (XAFS) spectroscopy has become increasingly popular in the field of semiconductors due to its ability to provide detailed information about the local atomic structure and electronic properties of materials. This article will discuss two specific applications of XAFS in semiconductors: characterizing the electronic properties of quantum dots and studying the effects of strain on semiconductor materials.
One of the most exciting applications of XAFS in semiconductors is the characterization of the electronic properties of quantum dots. Quantum dots are nanoscale semiconductor structures with unique electronic and optical properties. XAFS can be used to determine the local atomic structure and chemical composition of quantum dots, providing insights into their electronic band structure and energy levels. This information is crucial for understanding the fundamental properties of quantum dots and for designing devices with enhanced functionality, such as quantum dot solar cells and quantum dot lasers.
Another important application of XAFS in semiconductors is the study of the effects of strain on semiconductor materials. Strain, or the deformation of a crystal lattice, can significantly affect the electronic and optical properties of semiconductors. XAFS can be used to measure changes in bond lengths, bond angles, and coordination numbers induced by strain. By studying the effects of strain on the local atomic structure, researchers can gain a better understanding of how strain influences the band structure, carrier mobility, and optical properties of semiconductors. This knowledge is valuable for the design and optimization of strain-engineered semiconductor devices.
In conclusion, X-ray Absorption Fine Structure spectroscopy offers unique insights into the electronic properties of semiconductors. By characterizing the electronic properties of quantum dots and studying the effects of strain on semiconductor materials, XAFS provides valuable information for the design and optimization of semiconductor devices with enhanced functionality. The applications of XAFS in semiconductors continue to expand, offering new opportunities for advancing the field of semiconductor science and technology.
XAFS applications in semiconductors 篇三
XAFS applications in semiconductors
X-ray absorption fine structure (XAFS) has experienced a rapid development in the last three decades and has proven to be a powerful structural characterization technique nowadays. In this review, the XAFS basic principles including the theory, the data analysis, and the experiments have been introduced in detail. To show its strength as a local structure probe, the XAFS applications in semiconductors are summarized comprehensively, that is, thin films,quantum wells and dots, dilute magnetic semiconductors, and so on. In addition, certain new XAFS-related techniques,such as in-situ XAFS, micro-XAFS, and time-resolved XAFS are also shown.
作 者： WEI Shi-Qiang SUN Zhi-Hu PAN Zhi-Yun ZHANG Xin-Yi YAN Wen-Sheng ZHONG Wen
ZHANG Xin-Yi(Department of Physics, Surface Physics Laboratory (National Key Laboratory), and Synchrotron Radiation Research Center, Fudan University, Shanghai 200433, China)
刊 名：核技术（英文版） SCI 英文刊名： NUCLEAR SCIENCE AND TECHNIQUES 年，卷(期)： 200617(6) 分类号： O57 关键词： X-ray absorption fine structure (XAFS) Local structures Semiconductor quantum system Synchrotron radiation
